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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA606T
N-CHANNEL MOS FET (6-PIN 2 CIRCUITS) FOR SWITCHING
The PA606T is a mini-mold device provided with two MOS FET elements. It achieves high-density mounting and saves mounting costs.
PACKAGE DIMENSIONS (in millimeters)
0.65 +0.1 -0.15
0.32 +0.1 -0.05 0.16 -0.06
+0.1
FEATURES
* Two MOS FET elements in package the same size as SC-59 * Complement to PA607T * Automatic mounting supported
2.8 0.2
1.5
0 to 0.1
0.95
0.95 1.9
0.8 1.1 to 1.4
2.9 0.2
PIN CONNECTION
6 5 4
1
2
3
1. 2. 3. 4. 5. 6.
Source 1 Gate 1 Drain 2 Source 2 Gate 2 Drain 1
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Total Power Dissipation Channel Temperature Storage Temperature SYMBOL VDSS VGSS ID(DC) ID(pulse)* PT Tch Tstg RATINGS 50 20 100 200 300 (Total) 150 -55 to +150 UNIT V V mA mA mW C C
* PW 10 ms, Duty Cycle 50 %
Document No. G11253EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan
(c)
1996
PA606T
ELECTRICAL CHARACTERISTICS (TA = 25 C)
PARAMETER Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-State Resistance Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SYMBOL IDSS IGSS VGS(off) |yfs| RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf VGS(on) = 5.0 V, RG = 10 , VDD = 5.0 V, ID = 10 mA, RL = 500 TEST CONDITIONS VDS = 50 V, VGS = 0 VGS = 20 V, VDS = 0 VDS = 5.0 V, ID = 1.0 A VDS = 5.0 V, ID = 10 mA VGS = 4.0 V, ID = 10 mA VGS = 10 V, ID = 10 mA VDS = 5.0 V, VGS = 0, f = 1.0 MHz MIN. - - 0.8 20 - - - - - - - - - TYP. - - 1.4 - 19 15 16 12 3 17 10 68 38 MAX. 1.0 1.0 1.8 - 30 25 - - - - - - - UNIT
A A
V mS pF pF pF ns ns ns ns
SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS (RESISTANCE LOADED)
VGS DUT RL Gate voltage waveform 10 % VGS(on)
90 %
0
VDD RG PG. Drain current waveform VGS 0 = 1 s Duty Cycle 1 % 10 % ID 90 % 90 % ID 10 %
td(on) ton
tr
td(off) toff
tf
2
PA606T
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 240 100
dT - Derating Factor - % PT - Total Power Dissipation - mW
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
200 160 120 80 40
80 60 40 20
0
20
40 60 80 100 120 140 160 TC - Case Temperature - C
0
30 60 90 120 150 180 TA - Ambient Temperature - C
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 120 Pulsed measurement 100
ID - Drain Current - mA
TRANSFER CHARACTERISTICS 1 000 VDS = 5 V Pulsed measurement
4.0 V
ID - Drain Current - mA
3.5 V 80 60 3.0 V 40 20 VGS = 2.5 V
100
10 TA = 75 C 1 25 C -25 C 0.1
0
1
2 3 4 5 6 VDS - Drain to Source Voltage - V
7
0
2 4 6 VGS - Gate to Source Voltage - V
8
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 3
VGS(off) - Gate Cut-off Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100
|yfs| - Forward Transfer Admittance - mS
VDS = 5 V ID = 1.0 A
VDS = 5 V Pulsed measurement
30
2
TA = 75 C 25 C
10
-25 C
1
3
0 -30
1 0 30 60 90 120 Tch - Channel Temperature - C 150 1 10 100 ID - Drain Current - mA 1 000
3
PA606T
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 ID = 10 mA Pulsed measurement DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1 000 VGS = 10 V Pulsed measurement
RDS(on) - Drain to Source On-State Resistance -
30
RDS(on) - Drain to Source On-State Resistance -
300
10
100
3
30
TA = 75 C 25 C -25 C
1 1 3 10 30 VGS - Gate to Source Voltage - V 100
10 10
30 100 300 ID - Drain Current - mA CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1 000
RDS(on) - Drain to Source On-State Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 30 VGS = 10 V Pulsed measurement 100 Ciss, Coss, Crss - Capacitance - pF
Ciss
20
10
Coss Crss
10
1
0 -30
30 90 0 60 120 Tch - Channel Temperature - C
150
0.1 0.1
VGS = 0 f = 1 MHz
1 10 VDS - Drain to Source Voltage - V
100
SWITCHING CHARACTERISTICS 100 td(on), tr, td(off), tf - Switching Time - ns
td(off)
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 ISD - Source to Drain Current - mA VGS = 0 Pulsed measurement
50
tf
10
tr
20
1
td(on) VDD = 5 V VGS = 5 V RG = 10
10 10
20 50 ID - Drain Current - mA
100
0.1 0.4
0.5 0.6 0.7 0.8 0.9 VSD - Source to Drain Voltage - V
1.0
4
PA606T
REFERENCE
Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Document No. TEI-1202 IEI-1209 C10535E MEI-1202 X10679E
5
PA606T
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product.
M4 94.11

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